ABB 5SHY4045L0001 3BHB018162R0001 3BHE009681R0101 GVC750BE101
The ABB 5SHY4045L0001 3BHB018162R0001 is an Integrated Gate-Commutated Thyristor (IGCT) module produced by ABB, belonging to its 5SHY series. It is specifically designed for high-power power electronic systems. This module combines the advantages of traditional thyristors (GTO) and Insulated Gate Bipolar Transistors (IGBT), achieving efficient switching characteristics through an integrated gate structure. It is widely used in fields such as industrial automation, power transmission, and renewable energy.
Parameters
Basic Parameters
Model: 5SHY4045L0001 / 3BHB018162R0001
Brand: ABB
Type: IGCT module (Integrated Gate-Commutated Thyristor)
Rated Current: 4000 A (maximum)
Rated Voltage: 4500 V (maximum)
Switching Frequency: 1600 Hz (maximum)
Junction Temperature: 175°C (maximum)
Cooling Method: Water-cooled
Weight: Approximately 4 kg
Other Parameters
On-state Voltage Drop: Low (specific value not specified, but high efficiency is emphasized)
Turn-off Time: <1 µs (fast turn-off characteristic)
Operating Temperature Range: -40°C to +125°C
Product Features
Technical Advantages
High Reliability: Uses high-quality components and buffer layer technology, reducing dynamic losses by approximately 50%.
Fast Switching: Switching speed is 10 times faster than traditional GTO, suitable for high-frequency applications.
Low Loss: Combines the on-state characteristics of thyristors and the switching characteristics of transistors to achieve low power consumption.
Compact Design: Modular packaging (TO-247AB) saves space.
Performance Advantages
High Power Density: Single-chip integration of GTO, diode, and gate drive circuit reduces external connection inductance.
Cost-effectiveness: Compared with IGBT and GTO, it eliminates the need for complex snubber circuits and high-power drive units, reducing system costs.
Structure and Composition
Core Structure
GTO Chip: Based on the traditional thyristor structure, providing high current carrying capacity.
Anti-parallel Diode: Integrates a free-wheeling diode to achieve low on-state voltage drop and high blocking voltage.
Gate Drive Circuit: Integrates a gate driver, which improves switching stability through low-inductance connections.
Buffer Technology
Buffer Layer: Reduces dynamic losses and optimizes the switching process.
Transparent Emitter: Improves current injection efficiency and enhances switching speed.
Application Fields
Core Applications
Power Systems: Power substations, DC circuit breakers, DC transformers, etc.
Industrial Automation: Motor drives, variable frequency speed control, servo control.
New Energy: Power conversion in wind power generation and photovoltaic power generation systems.
Extended Applications
Rail Transit: Traction systems for electric locomotives and subways.
Renewable Energy: Static var compensators, High-Voltage Direct Current (HVDC) transmission.
Installation and Maintenance
Installation Method
Modular Design: Facilitates installation and maintenance, compatible with ABB inverter systems.
Water-cooled Heat Dissipation: A supporting water-cooling system is required to ensure stable operation at high power.
Maintenance Recommendations
Environmental Requirements: The operating temperature range is -40°C to +125°C, and high-temperature or humid environments should be avoided.
Regular Inspection: Monitor the cooling system and connection terminals to prevent overheating or poor contact.
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